<ins id="rlfhf"></ins>
<address id="rlfhf"></address>
<var id="rlfhf"></var><progress id="rlfhf"><del id="rlfhf"><dl id="rlfhf"></dl></del></progress><noframes id="rlfhf">
<var id="rlfhf"></var><var id="rlfhf"><video id="rlfhf"></video></var>
<progress id="rlfhf"></progress>
<del id="rlfhf"><noframes id="rlfhf"> <progress id="rlfhf"><del id="rlfhf"><noframes id="rlfhf"><progress id="rlfhf"><del id="rlfhf"></del></progress>
<address id="rlfhf"><del id="rlfhf"></del></address>

SbAsS?(硫化砷锑)

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硫化砷锑(SbAsS3)是直接间隙半导体,并且具有约1.7eV的带隙。与二硫化钼类似,它具有薄层间耦?#31995;?#23618;状结构(层状),可以分离成单层。单层厚度测量为?0.8nm。

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<ins id="rlfhf"></ins>
<address id="rlfhf"></address>
<var id="rlfhf"></var><progress id="rlfhf"><del id="rlfhf"><dl id="rlfhf"></dl></del></progress><noframes id="rlfhf">
<var id="rlfhf"></var><var id="rlfhf"><video id="rlfhf"></video></var>
<progress id="rlfhf"></progress>
<del id="rlfhf"><noframes id="rlfhf"> <progress id="rlfhf"><del id="rlfhf"><noframes id="rlfhf"><progress id="rlfhf"><del id="rlfhf"></del></progress>
<address id="rlfhf"><del id="rlfhf"></del></address>
<ins id="rlfhf"></ins>
<address id="rlfhf"></address>
<var id="rlfhf"></var><progress id="rlfhf"><del id="rlfhf"><dl id="rlfhf"></dl></del></progress><noframes id="rlfhf">
<var id="rlfhf"></var><var id="rlfhf"><video id="rlfhf"></video></var>
<progress id="rlfhf"></progress>
<del id="rlfhf"><noframes id="rlfhf"> <progress id="rlfhf"><del id="rlfhf"><noframes id="rlfhf"><progress id="rlfhf"><del id="rlfhf"></del></progress>
<address id="rlfhf"><del id="rlfhf"></del></address>