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MoTe2(2H二碲化鉬)

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2H-MoTe2(αMoTe2)是具有約1.2eV的間接帶隙的半導體和抗磁系統。Monolay 2H-MoTe2具有與層數成反比的直接帶隙。它是僅用于單層或雙層的直接帶隙材料。鉬化鈦也存在于1T'MoTe2相中,該相是半金屬,這些層通過范德華相互作用堆疊在一起,并且可以被剝離成薄的2D。MoTe2屬于VI族過渡金屬二硫屬元素(TMDC)。

α-MoTe2晶體具有約0.6-0.8厘米的典型橫向尺寸,呈六邊形并具有金屬外觀。2H MoTe2是室溫下典型的載流子濃度為約10 17 cm -3N 型半導體。

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