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MoTe2(2H二碲化钼)

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2H-MoTe2(αMoTe2)是具有约1.2eV的间接带隙的半导体和抗磁系?#22330;?/span>Monolay 2H-MoTe2具有与层数成反比的直接带隙。它是仅用于单层或双层的直接带隙材料。钼化钛也存在于1T'MoTe2相中,该相是半金属,这些层通过范德华相互作用堆叠在一起,并且可以被剥离成薄的2D。MoTe2属于VI族过渡金属二硫属元素(TMDC)。

α-MoTe2晶体具有约0.6-0.8厘米的典型横向尺寸,呈六边形并具有金属外观。2H MoTe2是室温下典型的载流子浓度为约10 17 cm -3N 型半导体。

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