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MoS2(2H二硫化钼)

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MoS2(2H相)是间接带隙为1.2eV的半导体。单层MoS2具有?1.8eV的带隙。二硫化钼?#31859;?#20363;如光检测器和晶体管。这些层通过范德华相互作用堆叠在一起,并且可以被剥离成薄的2D层。MoS2属于第VI族过渡金属二硫属元素(TMDC)。

2H相MoS2晶体具有约0.8-1厘米的典型横向尺寸,六边形/矩形,具有金属外观。我们生产n型和p型MoS2,在室温下具有约10 15 cm -3的典型载流子密度

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