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MoS2(2H二硫化鉬)

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MoS2(2H相)是間接帶隙為1.2eV的半導體。單層MoS2具有?1.8eV的帶隙。二硫化鉬用作例如光檢測器和晶體管。這些層通過范德華相互作用堆疊在一起,并且可以被剝離成薄的2D層。MoS2屬于第VI族過渡金屬二硫屬元素(TMDC)。

2H相MoS2晶體具有約0.8-1厘米的典型橫向尺寸,六邊形/矩形,具有金屬外觀。我們生產n型和p型MoS2,在室溫下具有約10 15 cm -3的典型載流子密度

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