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GeS(硫化锗)

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GeS是间接带隙为1.6eV的半导体。这些层通过范德华相互作用堆叠在一起,并且可以被剥离成薄的2D层。GeS属于14族过渡金属单硫元素。 

GeS晶体具有约0.6-0.8厘米的典型横向尺寸,?#31034;匭尾?#20855;有金属外观。 

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