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GeS(硫化鍺)

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GeS是間接帶隙為1.6eV的半導體。這些層通過范德華相互作用堆疊在一起,并且可以被剝離成薄的2D層。GeS屬于14族過渡金屬單硫元素。 

GeS晶體具有約0.6-0.8厘米的典型橫向尺寸,呈矩形并具有金屬外觀。 

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