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h-BN(六方氮化硼)

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单晶尺寸:1mm~1.5mm

水晶结构:六角形

单元格参数 a = b = 0.2502nm,c = 0.6617nm,α=β= 90°,γ= 120° 

六方氮化硼是具有约5.9eV的直接带隙的半导体,已被广泛?#31859;?#29992;于生产由各种2D半导体(例如WSe2,MoSe2等)组成的超高迁移率二维异质结构的绝缘体。这些层通过范德华相互作用堆叠在一起,并且可以被剥离成薄的2D层,直到单层h-BN。

h-BN晶体具有约0.1cm的典型侧向尺寸并且是?#35813;?#30340;。单晶h-BN是一种优异的绝缘体,由其非常大的击穿电压(> 0.4V / nm)表示。大面积尺寸的h-BN单晶可以被剥离到基底(例如SiO 2,石英,聚合物等)上。对于厚度为几十nm的厚度的晶体,尺寸范围可达?100μm。


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