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h-BN(六方氮化硼)

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單晶尺寸:1mm~1.5mm

水晶結構:六角形

單元格參數 a = b = 0.2502nm,c = 0.6617nm,α=β= 90°,γ= 120° 

六方氮化硼是具有約5.9eV的直接帶隙的半導體,已被廣泛用作用于生產由各種2D半導體(例如WSe2,MoSe2等)組成的超高遷移率二維異質結構的絕緣體。這些層通過范德華相互作用堆疊在一起,并且可以被剝離成薄的2D層,直到單層h-BN。

h-BN晶體具有約0.1cm的典型側向尺寸并且是透明的。單晶h-BN是一種優異的絕緣體,由其非常大的擊穿電壓(> 0.4V / nm)表示。大面積尺寸的h-BN單晶可以被剝離到基底(例如SiO 2,石英,聚合物等)上。對于厚度為幾十nm的厚度的晶體,尺寸范圍可達?100μm。


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