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GaS(α相硫化鎵)

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GaS(α相)是具有約2.6eV的間接帶隙的半導體。這些層通過范德華相互作用堆疊在一起,并且可以被剝離成薄的2D層。α-GaS屬于第13族過渡后金屬單硫元素。

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