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GaS(α相硫化镓)

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GaS(α相)是具有约2.6eV的间接带隙的半导体。这些层通过范德华相互作用堆叠在一起,并且可以被剥离成薄的2D层。α-GaS属于第13族过渡后金属单硫元素。

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